What’s ITF:
ITF stands for Interconnect Technology File.
It contains a description of the process cross-section and connectivity section.
It describes the thicknesses and physical attributes of the conductor and dielectric layers.
It used to extract RC value for the chip.
It can be used to generate TLU TLUPlus files.
What ITF file contain:
ITF contains statements to describe conductor layers, dielectric layers, via layers and etc.
CONDUCTOR statement:
Syntax:
CONDUCTOR { THICKNESS=value
WMIN=value
SMIN=value }
Descriptions:
THICKNESS: measured from top of the dielectric layer below it
WMIN: Minimum width of the conductor
SMIN: Minimum spacing between two conductors
RPSQ: Sheet resistance, units: ohms/sq
DIELECTRIC statement:
Syntax:
DIELECTRIC { THICKNESS=value ER=value
[MEASURED_FROM ]
[SW_T=value]
[TW_T=value ] }
Descriptions:
THICKNESS:
Measured from top of the dielectric layer below it by default
Reference can be changed using MEASURED_FROM
MEASURED_FROM:
Reference can be set to top of any other lower dielectric layer
TOP_OF_CHIP denotes the top surface of the process stack that has already been defined
ER: Dielectric constant of the layer
SW_T & TW_T:
Used for MEASURED_FROM=TOP_OF_CHIP
VIA statement:
Syntax:
VIA { FROM=value TO=value
RHO=value | RPV=value
AREA=value }
Descriptions:
RHO: Resistivity, units: ohms-micron
RPV: Resistance per default via, units: ohms
AREA: Area of default via, units: square-microns
ITF file also contain following data:
conformal dielectrics ( MEASURED_FROM=TOP_OF_CHIP)
Emulation metal fill (FILL_TYPE, FILL_WIDTH, FILL_SPACING, FILL_RATIO)
Drop factor (DROP_FACTOR)
Etch (ETCH)
Width and spacing based etch (ETCH_VS_WIDTH_AND_SPACING)
Density based thickness (THICKNESS_VS_DENSITY)
Width dependent RPSQ (RPSQ_VS_SI_WIDTH)
Temperature derating (CRT1, CRT2)
ITF file example:
TECHNOLOGY=nx
DIELECTRIC SIN { THICKNESS=2.25 ER=7.5 }
DIELECTRIC ILD4 { THICKNESS=0.8 ER=4.1 }
CONDUCTOR M3 { THICKNESS=0.8 WMIN=0.6 SMIN=0.5 RPSQ=0.66 }
DIELECTRIC ILD3 { THICKNESS=1.7 ER=4.1 }
CONDUCTOR M2 { THICKNESS=0.7 WMIN=0.6 SMIN=0.5 RPSQ=0.66 }
DIELECTRIC ILD2 { THICKNESS=1.8 ER=4.1 }
CONDUCTOR M1 { THICKNESS=0.8 WMIN=0.5 SMIN=0.45 RPSQ=0.33 }
DIELECTRIC ILD1 { THICKNESS=1.2 ER=3.9 }
CONDUCTOR POLY { THICKNESS=0.3 WMIN=0.35 SMIN=0.45 RPSQ=21 }
DIELECTRIC FOX { THICKNESS=0.3 ER=3.9 }
VIA POLYCONT {FROM = M1 TO = POLY AREA=0.25 RPV=5}
VIA VIA1 { FROM = M2 TO = M1 AREA = 0.36 RPV = 4}
VIA VIA2 { FROM = M3 TO = M2 AREA = 0.36 RPV = 4}
ITF file example2:
TECHNOLOGY = mx
DIELECTRIC PASS3 {THICKNESS=0.600 ER=7.9 }
DIELECTRIC PASS2 {THICKNESS=0.150 ER=4.2 }
DIELECTRIC PASS1 {THICKNESS=1.000 ER=4.2 }
CONDUCTOR metal6 { THICKNESS= 0.99 WMIN= 0.44 SMIN= 0.46 RPSQ=0.045 }
DIELECTRIC IMD5b {THICKNESS=0.350 ER=4.2 }
DIELECTRIC IMD5a {THICKNESS=1.180 ER=3.7 }
CONDUCTOR metal5 { THICKNESS= 0.53 WMIN= 0.28 SMIN= 0.28 RPSQ=0.101 }
DIELECTRIC IMD4b {THICKNESS=0.200 ER=4.2 }
DIELECTRIC IMD4a {THICKNESS=1.180 ER=3.7 }
CONDUCTOR metal4 { THICKNESS= 0.53 WMIN= 0.28 SMIN= 0.28 RPSQ=0.101 }
DIELECTRIC IMD3b {THICKNESS=0.200 ER=4.2 }
DIELECTRIC IMD3a {THICKNESS=1.180 ER=3.7 }
CONDUCTOR metal3 { THICKNESS= 0.53 WMIN= 0.28 SMIN= 0.28 RPSQ=0.101 }
DIELECTRIC IMD2b {THICKNESS=0.200 ER=4.2 }
DIELECTRIC IMD2a {THICKNESS=1.180 ER=3.7 }
CONDUCTOR metal2 { THICKNESS= 0.53 WMIN= 0.28 SMIN= 0.28 RPSQ=0.101 }
DIELECTRIC IMD1b {THICKNESS=0.200 ER=4.2 }
DIELECTRIC IMD1a {THICKNESS=1.180 ER=3.7 }
CONDUCTOR metal1 { THICKNESS= 0.53 WMIN= 0.23 SMIN= 0.23 RPSQ=0.101 }
DIELECTRIC ILD_B {THICKNESS=0.500 ER=4.0 }
DIELECTRIC ILD_C {THICKNESS=0.200 ER=4.0 }
CONDUCTOR poly { THICKNESS= 0.20 WMIN= 0.18 SMIN= 0.25 RPSQ=7.8 }
DIELECTRIC FOX {THICKNESS=0.040 ER=3.9 }
VIA polyCont { FROM=poly TO=metal1 AREA=0.0484 RPV=6.7 }
VIA via5 { FROM=metal5 TO=metal6 AREA=0.1296 RPV=2.5 }
VIA via4 { FROM=metal4 TO=metal5 AREA=0.0676 RPV=6.4 }
VIA via3 { FROM=metal3 TO=metal4 AREA=0.0676 RPV=6.4 }
VIA via2 { FROM=metal2 TO=metal3 AREA=0.0676 RPV=6.4 }
VIA via1 { FROM=metal1 TO=metal2 AREA=0.0676 RPV=6.4 }
